NST857BDP6T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual General Purpose Transistor

NST857BDP6T5G
Dual General Purpose
Transistor
The NST857BDP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h_FE, 220−475
• Low V_CE(sat), ≤ 0.3 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• This is a Pb−Free Device
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
MAXIMUM RATINGS
NST857BDP6T5G
Rating
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
HBM
MM
V_CEO
V_CBO
V_EBO
I_C
ESD
Class
THERMAL CHARACTERISTICS
−45
−50
−6.0
−100
2
B
Vdc
Vdc
Vdc
mAdc
65 ⁴
12 ³
SOT−963
CASE 527AD
PLASTIC
Characteristic (Single Heated)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
Symbol
P_D
Max
240
1.9
Unit
mW
mW/°C
MARKING DIAGRAM
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
R_qJA
P_D
520
°C/W
280
mW
2.2 mW/°C
KMG
G
1
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
R_qJA
Symbol
P_D
446
Max
350
2.8
°C/W
Unit
mW
mW/°C
K = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
R_qJA
P_D
357
°C/W
420
mW
3.4 mW/°C
ORDERING INFORMATION
Device
Package
Shipping^†
Thermal Resistance, Junction-to-Ambient
(Note 2)
R_qJA
297
°C/W
NST857BDP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
Junction and Storage Temperature Range T_J, T_stg −55 to
°C
+150
†For information on tape and reel specifications,
including part orientation and tape sizes, please
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2008
1
April, 2008 − Rev. 0
Publication Order Number:
NST857BDP6/D