|
NST3904DP6T5G_14 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual General Purpose Transistor | |||
|
NST3904DP6T5G
Dual General Purpose
Transistor
The NST3904DP6T5G device is a spinâoff of our popular
SOTâ23/SOTâ323/SOTâ563 threeâleaded device. It is designed for
general purpose amplifier applications and is housed in the SOTâ963
sixâleaded surface mount package. By putting two discrete devices in
one package, this device is ideal for lowâpower surface mount
applications where board space is at a premium.
Features
⢠hFE, 100â300
⢠Low VCE(sat), ⤠0.4 V
⢠Reduces Board Space and Component Count
⢠NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECâQ101
Qualified and PPAP Capable
⢠These Devices are PbâFree, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS
http://onsemi.com
(3)
(2)
(1)
Q1
Q2
(4)
(5)
(6)
NST3904DP6T5G
Rating
Collector âEmitter Voltage
Collector âBase Voltage
Emitter âBase Voltage
Collector Current â Continuous
Electrostatic Discharge
Symbol
HBM
MM
VCEO
VCBO
VEBO
IC
ESD
Class
Value
40
60
6.0
200
2
B
Unit
Vdc
Vdc
Vdc
mAdc
65 4
12 3
SOTâ963
CASE 527AD
THERMAL CHARACTERISTICS
Characteristic (Single Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Symbol
PD
Max
240
1.9
Unit
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 1)
RqJA
520
°C/W
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
PD
280
mW
2.2 mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
RqJA
446
°C/W
MARKING DIAGRAM
EMG
G
1
E = Device Code
M = Date Code
G = PbâFree Package
(Note: Microdot may be in either location)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 2)
Symbol
PD
RqJA
PD
Max
350
2.8
357
420
3.4
Unit
mW
mW/°C
°C/W
mW
mW/°C
ORDERING INFORMATION
Device
Package
Shippingâ
NST3904DP6T5G SOTâ963 8000/Tape & Reel
(PbâFree)
NSVT3904DP6T5G SOTâ963 8000/Tape & Reel
(PbâFree)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range
RqJA
TJ, Tstg
297
â55 to
+150
°C/W
°C
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FRâ4 @ 100 mm2, 1 oz. copper traces, still air.
2. FRâ4 @ 500 mm2, 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels.
© Semiconductor Components Industries, LLC, 2014
1
June, 2014 â Rev. 1
Publication Order Number:
NST3904DP6/D
|
▷ |