NSS60201LT1G Datasheet, PDF (1/5 Pages) ON Semiconductor – 60 V, 4.0 A, Low VCE(sat) NPN Transistor

NSS60201LT1G
60 V, 4.0 A, Low V_CE(sat)
NPN Transistor
ON Semiconductor's e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC-DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU's control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•ăThis is a Pb-Free Device
MAXIMUM RATINGS (T_A = 25°C)
Rating
Collector‐Emitter Voltage
Collector‐Base Voltage
Emitter‐Base Voltage
Collector Current - Continuous
Collector Current - Peak
Electrostatic Discharge
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
ESD
Max
Unit
60
Vdc
140
Vdc
8.0
Vdc
2.0
A
4.0
A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
Junction-to-Ambient
R_qJA (Note 1)
270
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
P_D (Note 2)
540
mW
4.3
mW/°C
R_qJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P_Dsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
T_J, T_stg
-55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-ā4 @ 100 mm², 1 oz. copper traces.
2. FR-ā4 @ 500 mm², 1 oz. copper traces.
3. Thermal response.
©Ă Semiconductor Components Industries, LLC, 2007
1
December, 2007 - Rev. 1
http://onsemi.com
60 VOLTS, 4.0 AMPS
NPN LOW V_CE(sat) TRANSISTOR
EQUIVALENT R_DS(on) 70 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT-23 (TO-236)
CASE 318
STYLE 6
DEVICE MARKING
VJ MĂG
G
1
VJ = Specific Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NSS60201LT1G SOT-23 3000/Tape & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS60201L/D