NSS40501UW3_13 Datasheet, PDF (1/5 Pages) ON Semiconductor – 40 V, 5.0 A, Low VCE(sat) NPN Transistor

NSS40501UW3,
NSV40501UW3
40 V, 5.0 A, Low V_CE(sat)
NPN Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
V_CEO
V_CBO
V_EBO
I_C
I_CM
ESD
40
Vdc
40
Vdc
6.0
Vdc
5.0
Adc
7.0
A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D (Note 1)
875
mW
7.0
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
143
°C/W
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D (Note 2)
1.5
W
11.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
85
°C/W
Thermal Resistance,
Junction−to−Lead #3
R_qJL (Note 2)
23
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm², 1 oz copper traces.
2. FR−4 @ 500 mm², 1 oz copper traces.
© Semiconductor Components Industries, LLC, 2013
1
August, 2013 − Rev. 5
http://onsemi.com
40 VOLTS, 5.0 AMPS
NPN LOW V_CE(sat) TRANSISTOR
EQUIVALENT R_DS(on) 38 mW
COLLECTOR
3
1
BASE
3
2
1
2
EMITTER
WDFN3
CASE 506AU
MARKING DIAGRAM
VB M G
G
1
VB = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
NSS40501UW3T2G ^WDFN3
3000/
(Pb−Free) Tape & Reel
NSV40501UW3T2G ^WDFN3
3000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS40501UW3/D