NSS40200UW6T1G_14 Datasheet, PDF (1/5 Pages) ON Semiconductor – PNP Transistor

NSS40200UW6T1G,
NSV40200UW6T1G
40 V, 2.0 A, Low V_CE(sat)
PNP Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
V_CEO
V_CBO
V_EBO
I_C
I_CM
ESD
−40
Vdc
−40
Vdc
−7.0
Vdc
−2.0
Adc
−4.0
A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D (Note 1)
875
mW
7.0
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
143
°C/W
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D (Note 2)
1.5
W
11.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
85
°C/W
Thermal Resistance,
Junction−to−Lead #1
R_qJL (Note 2)
23
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
P_Dsingle
3.0
W
(Notes 2 & 3)
Junction and Storage
Temperature Range
T_J, T_stg
1. FR− 4 @ 100 mm², 1 oz copper traces.
2. FR− 4 @ 500 mm², 1 oz copper traces.
3. Thermal response.
−55 to
°C
+150
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 2
http://onsemi.com
−40 VOLTS
2.0 AMPS
PNP LOW V_CE(sat) TRANSISTOR
EQUIVALENT R_DS(on) 100 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
E
C
WDFN6
CASE 506AP
Pin 1
MARKING DIAGRAM
1
6
2 ^{VA MG} 5
3^G4
VA = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSS40200UW6T1G
Package
WDFN6
(Pb−Free)
Shipping^†
3000/
Tape & Reel
NSV40200UW6T1G ^WDFN6
3000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS40200UW6/D