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NSS40200LT1G_07 Datasheet, PDF (1/5 Pages) ON Semiconductor – 40 V, 4.0 A, Low VCE(sat) PNP Transistor | |||
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NSS40200LT1G
40 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductorâs e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DCâDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMUâs control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
⢠This is a PbâFree Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current â Continuous
Collector Current â Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
â40
Vdc
â40
Vdc
â7.0
Vdc
â2.0
A
â4.0
A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460
mW
3.7
mW/°C
Thermal Resistance,
JunctionâtoâAmbient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctionâtoâAmbient
PD (Note 2)
540
mW
4.3
mW/°C
RqJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Note 3)
710
mW
Junction and Storage
Temperature Range
TJ, Tstg
â55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FRâ4 @ 100 mm2, 1 oz. copper traces.
2. FRâ4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2007
1
March, 2007 â Rev. 2
http://onsemi.com
â40 VOLTS
4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 80 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOTâ23 (TOâ236)
CASE 318
STYLE 6
DEVICE MARKING
VA M G
G
1
VA = Specific Device Code
M = Date Code*
G = PbâFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shippingâ
NSS40200LT1G SOTâ23 3000/Tape & Reel
(PbâFree)
â For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS40200L/D
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