NSS1C200L_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – PNP Transistor

NSS1C200L, NSV1C200L
100 V, 2.0 A, Low V_CE(sat)
PNP Transistor
ON Semiconductor’s e²PowerEdge family of low V_CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V_CE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e²PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
V_CEO
V_CBO
V_EBO
I_C
I_CM
−100
Vdc
−140
Vdc
−7.0
Vdc
−2.0
A
−3.0
A
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 1)
490
mW
3.7
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 1)
255
°C/W
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D (Note 2)
710
mW
4.3
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA (Note 2)
176
°C/W
Junction and Storage
Temperature Range
T_J, T_stg
−55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 4 @ 100 mm², 1 oz. copper traces.
2. FR− 4 @ 500 mm², 1 oz. copper traces.
© Semiconductor Components Industries, LLC, 2007
1
October, 2016 − Rev. 6
www.onsemi.com
−100 VOLTS, 2.0 AMPS
PNP LOW V_CE(sat) TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
MARKING DIAGRAM
VL MG
G
1
VL = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping^†
NSS1C200LT1G, SOT−23 3000/Tape & Reel
NSV1C200LT1G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C200L/D