NSR15DW1 Datasheet, PDF (1/4 Pages) ON Semiconductor – Dual RF Schottky Diode

NSR15DW1
Dual RF Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features
• Low Capacitance (<1 pF)
• Low V_F (390 mV typical @ 1 mA)
• Low V_FD (1 mV typical @ 1 mA)
• Pb−Free Package is Available
Benefits
• Reduced Parasitic Losses
• Accurate Signal Measurement
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Reverse Voltage
V_R
15
V
Forward Current
I_F
30
mA
Operating and Storage Temperature Range T_J, T_stg −65 to +150 °C
ESD Rating: Class 1 per Human Body Model
ESD Rating: Class A per Machine Model
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Thermal Resistance,
Junction−to−Ambient
R_qJA
500
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
65 4
12 3
SC−88
CASE 419B
1
STYLE 21
MARKING DIAGRAM
R5 M G
G
1
R5
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
NSR15DW1T1
SC−88 3000/Tape & Reel
NSR15DW1T1G SC−88 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 2
Publication Order Number:
NSR15DW1/D