NSR0320XV6T5 Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR0320XV6T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high current,
handling capability, and low forward voltage performance.
• Low Forward Voltage − 0.35 Volts (Typ) @ I_F = 10 mAdc
• High Current Capability
http://onsemi.com
HIGH CURRENT
SCHOTTKY BARRIER DIODE
1, 2, 5, 6
CATHODE
3, 4
ANODE
MAXIMUM RATINGS (T_J = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ T_A = 25°C
Derate above 25°C
V_R
23
V
P_F
200
mW
2.0
mW/°C
Forward Current (DC)
Continuous
I_F
A
1
Forward Current
t = 8.3 ms Half Sinewave;
JEDEC Method
I_F
A
7.5
Junction Temperature
Storage Temperature Range
T_J
125 Max
°C
T_stg −55 to +150 °C
6
1
SOT−563
CASE 463A
STYLE 5
MARKING
DIAGRAM
6
RD D
1
RD = Specific Device Code
D = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
NSR0320XV6T1 SOT−563 3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 3
Publication Order Number:
NSR0320XV6T1/D