NSR01F30MX Datasheet, PDF (1/4 Pages) ON Semiconductor – Schottky Barrier Diode

NSR01F30MX
Schottky Barrier Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current.
Features
• Very Low Forward Voltage Drop − 350 mV @ 10 mA
• Low Reverse Current − 5 mA @ 10 V
• 100 mA of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
Markets
• Mobile Handsets
• MP3 Players
• Digital Camera and Camcorders
• Notebook PCs & PDAs
• GPS
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
V_R
30
V
Forward Current (DC)
I_F
100
mA
Forward Surge Current
I_FSM
A
(60 Hz @ 1 cycle)
2.0
ESD Rating:
Human Body Model
ESD
>8.0
kV
Machine Model
>400
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
30 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
X3DFN2
CASE 152AF
MARKING
DIAGRAM
PIN 1
M
F = Specific Device Code
(Rotated 180°)
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NSR01F30MXT5G X3DFN2
(Pb−Free)
15000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
August, 2014 − Rev. 2
Publication Order Number:
NSR01F30MX/D