NSD16F3T5G Datasheet, PDF (1/4 Pages) ON Semiconductor – Switching Diode

NSD16F3T5G
Switching Diode
The NSD16F3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for switching applications and is
housed in the SOT−1123 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• This is a Pb−Free Device
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
V_R
75
I_F
200
I_FM(surge)
500
Vdc
mAdc
mAdc
Characteristic
Total Device Dissipation, T_A = 25°C
Derate above 25°C
Symbol
P_D
(Note 1)
Max
290
2.3
Unit
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
432
(Note 1)
°C/W
Total Device Dissipation, T_A = 25°C
Derate above 25°C
P_D
347
mW
(Note 2)
2.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
R_qJA
360
(Note 2)
°C/W
Thermal Resistance,
Junction−to−Lead 3
R_YJL
143
(Note 2)
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to
°C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. 100 mm² 1 oz, copper traces.
2. 500 mm² 1 oz, copper traces.
http://onsemi.com
3
CATHODE
1
ANODE
NSD16F3T5G
3
12
SOT−1123
CASE 524AA
STYLE 2
MARKING DIAGRAM
TM
T = Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
NSD16F3T5G
SOT−1123 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
1
January, 2009 − Rev. 0
Publication Order Number:
NSD16F3/D