NRVTS245ESF Datasheet, PDF (1/5 Pages) ON Semiconductor – Very Low Forward Voltage Trench-based Schottky Rectifier

NRVTS245ESF
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 11.7 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
• MSL 1
Typical Applications
• Switching Power Supplies including Compact Adapters and Flat
Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
• Automotive LED Lighting
http://onsemi.com
TRENCH SCHOTTKY
RECTIFIER
2.0 AMPERES
45 VOLTS
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
2AEMG
G
2AE = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping^†
NRVTS245ESFT1G
SOD−123
3,000/
(Pb−Free) Tape & Reel
NRVTS245ESFT3G
SOD−123
10,000/
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 0
Publication Order Number:
NRVTS245ESF/D