NRVBD1035CTLT4G Datasheet, PDF (1/6 Pages) ON Semiconductor – SWITCHMODE Schottky Power Rectifier

NRVBD1035CTL
SWITCHMODE
Schottky Power Rectifier
DPAK Power Surface Mount Package
The NRVBD1035CTL employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State of the art geometry
features epitaxial construction with oxide passivation and metal
overlay contact. Ideally suited for low voltage, high frequency
switching power supplies, free wheeling diode and polarity protection
diodes.
Features
• Highly Stable Oxide Passivated Junction
• Guardring for Stress Protection
• Matched Dual Die Construction −
May be Paralleled for High Current Output
• High dv/dt Capability
• Short Heat Sink Tap Manufactured − Not Sheared
• Very Low Forward Voltage Drop
• Epoxy Meets UL 94 V−0 @ 0.125 in
• This is a Pb−Free Device
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
10 AMPERES
35 VOLTS
1
4
3
4
12
3
DPAK
CASE 369C
MARKING DIAGRAM
YWW
B10
35CLG
Y
WW
B1035CL
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
June, 2011 − Rev. 0
Publication Order Number:
NRVBD1035CTL/D