NJT4031N_10 Datasheet, PDF (1/6 Pages) ON Semiconductor – Bipolar Power Transistors

NJT4031N
Bipolar Power Transistors
NPN Silicon
Features
• Collector −Emitter Sustaining Voltage −
V_CEO(sus) = 40 Vdc (Min) @ I_C = 10 mAdc
• High DC Current Gain −
h_FE = 200 (Min) @ I_C = 1.0 Adc
= 100 (Min) @ I_C = 3.0 Adc
• Low Collector −Emitter Saturation Voltage −
V_CE(sat) = 0.150 Vdc (Max) @ I_C = 1.0 Adc
= 0.300 Vdc (Max) @ I_C = 3.0 Adc
• SOT−223 Surface Mount Packaging
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
NPN TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOT−223
CASE 318E
STYLE 1
AYW
4031NG
1
A
Y
W
4031N
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb−Free Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
September, 2010 − Rev. 1
Publication Order Number:
NJT4031N/D