NJT4031N Datasheet, PDF (1/6 Pages) ON Semiconductor – Bipolar Power Transistors NPN Silicon

NJT4031N
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
•ăCollector -Emitter Sustaining Voltage -
V_CEO(sus) = 40 Vdc (Min) @ I_C = 10 mAdc
•ăHigh DC Current Gain -
h_FE = 200 (Min) @ I_C = 1.0 Adc
= 100 (Min) @ I_C = 3.0 Adc
•ăLow Collector -Emitter Saturation Voltage -
V_CE(sat) = 0.150 Vdc (Max) @ I_C = 1.0 Adc
= 0.300 Vdc (Max) @ I_C = 3.0 Adc
•ăSOT-223 Surface Mount Packaging
•ăEpoxy Meets UL 94, V-0 @ 0.125 in
•ăESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
•ăThese are Pb-Free Devices
http://onsemi.com
NPN TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOT-223
CASE 318E
STYLE 1
AYW
4031NG
1
A
Y
W
4031N
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb-Free Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
©Ă Semiconductor Components Industries, LLC, 2007
1
August, 2007 - Rev. 0
Publication Order Number:
NJT4031N/D