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| NJT4030P_10 Datasheet, PDF (1/7 Pages) ON Semiconductor – Bipolar Power Transistors | |||
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NJT4030P
Bipolar Power Transistors
PNP Silicon
Features
ï· Collector --Emitter Sustaining Voltage --
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
ï· High DC Current Gain --
hFE = 200 (Min) @ IC = 1.0 Adc
= 100 (Min) @ IC = 3.0 Adc
ï· Low Collector --Emitter Saturation Voltage --
VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc
= 0.500 Vdc (Max) @ IC = 3.0 Adc
ï· SOT--223 Surface Mount Packaging
ï· Epoxy Meets UL 94, V--0 @ 0.125 in
ï· ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
ï· These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOT--223
CASE 318E
STYLE 1
AYW
4030PG
1
A
Y
W
4030P
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= Pb--Free Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ï£ Semiconductor Components Industries, LLC, 2010
1
September, 2010 -- Rev. 1
Publication Order Number:
NJT4030P/D
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