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| NJT4030P Datasheet, PDF (1/6 Pages) ON Semiconductor – Bipolar Power Transistors PNP Silicon | |||
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NJT4030P
Preferred Device
Product Preview
Bipolar Power Transistors
PNP Silicon
Features
⢠Collector âEmitter Sustaining Voltage â
VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc
⢠High DC Current Gain â
hFE = 200 (Min) @ IC = 1.0 Adc
= 100 (Min) @ IC = 3.0 Adc
⢠Low Collector âEmitter Saturation Voltage â
VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc
= 0.500 Vdc (Max) @ IC = 3.0 Adc
⢠SOTâ223 Surface Mount Packaging
⢠Epoxy Meets UL 94, Vâ0 @ 0.125 in
⢠ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
⢠These are PbâFree Devices
http://onsemi.com
PNP TRANSISTOR
3.0 AMPERES
40 VOLTS, 2.0 WATTS
C 2,4
B1 E3
Schematic
MARKING
DIAGRAM
SOTâ223
CASE 318E
STYLE 1
AYW
4030PG
1
A
Y
W
4030P
G
= Assembly Location
Year
= Work Week
= Specific Device Code
= PbâFree Package
PIN ASSIGNMENT
4
C
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
BCE
1 23
Top View Pinout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
December, 2006 â Rev. P2
Publication Order Number:
NJT4030P/D
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