NGTB40N120LWG Datasheet, PDF (1/9 Pages) ON Semiconductor – IGBT

NGTB40N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low on−state voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology
• Low Switching Loss Reduces System Power Dissipation
• Low Gate Charge
• 5 ms Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Inverter Welding Machines
• Microwave Ovens
• Industrial Switching
• Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
V_CES
1200
V
I_C
A
80
40
Pulsed collector current, T_pulse
limited by T_Jmax
I_CM
320
A
Diode forward current
@ TC = 25°C
@ TC = 100°C
I_F
A
80
40
Diode pulsed current, T_pulse limited
I_FM
by T_Jmax
Gate−emitter voltage
V_GE
Power Dissipation
P_D
@ TC = 25°C
@ TC = 100°C
320
A
$20
V
W
260
104
Short−Circuit Withstand Time
V_GE = 15 V, V_CE = 600 V, T_J ≤ 150°C
Operating junction temperature range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
T_sc
T_J
T_stg
T_SLD
5
ms
−55 to +150 °C
−55 to +150 °C
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 1200 V
V_CEsat = 1.90 V
E_off = 1.40 mJ
C
G
E
G
C
E
TO−247
CASE 340L
STYLE 4
MARKING DIAGRAM
40N120L
AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NGTB40N120LWG
Package Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2012
1
September, 2012 − Rev. 0
Publication Order Number:
NGTB40N120L/D