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NGTB25N120LWG Datasheet, PDF (1/9 Pages) ON Semiconductor – IGBT | |||
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NGTB25N120LWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications. Offering
both low onâstate voltage and minimal switching loss, the IGBT is
well suited for resonant or soft switching applications. Incorporated
into the device is a rugged coâpackaged free wheeling diode with a
low forward voltage.
Features
⢠Low Saturation Voltage using Trench with Field Stop Technology
⢠Low Switching Loss Reduces System Power Dissipation
⢠Low Gate Charge
⢠5 ms ShortâCircuit Capability
⢠These are PbâFree Devices
Typical Applications
⢠Inverter Welding Machines
⢠Microwave Ovens
⢠Industrial Switching
⢠Motor Control Inverter
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collectorâemitter voltage
Collector current
@ TC = 25°C
@ TC = 100°C
VCES
1200
V
IC
A
50
25
Pulsed collector current, Tpulse
limited by TJmax
ICM
200
A
Diode forward current
@ TC = 25°C
@ TC = 100°C
IF
A
50
25
Diode pulsed current, Tpulse limited
IFM
by TJmax
Gateâemitter voltage
VGE
Power Dissipation
PD
@ TC = 25°C
@ TC = 100°C
200
A
$20
V
W
192
77
ShortâCircuit Withstand Time
Tsc
VGE = 15 V, VCE = 600 V, TJ ⤠150°C
Operating junction temperature
TJ
range
5
ms
â55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8â
from case for 5 seconds
Tstg
TSLD
â55 to +150 °C
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
25 A, 1200 V
VCEsat = 1.85 V
Eoff = 0.8 mJ
C
G
E
G
C
E
TOâ247
CASE 340L
STYLE 4
MARKING DIAGRAM
25N120L
AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= PbâFree Package
ORDERING INFORMATION
Device
NGTB25N120LWG
Package Shipping
TOâ247 30 Units / Rail
(PbâFree)
© Semiconductor Components Industries, LLC, 2012
1
August, 2012 â Rev. 4
Publication Order Number:
NGTB25N120L/D
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