NDUL09N150C Datasheet, PDF (1/5 Pages) ON Semiconductor – Single N−Channel Power MOSFET

NDUL09N150C
Power MOSFET
1500V, 3.0Ω, 9A, N-Channel
www.onsemi.com
Features
 Low On-Resistance
 Ultra High Voltage
 Pb-Free and RoHS Compliance
 High Speed Switching
 100% Avalanche Tested
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW  10s, duty cycle  1%
Symbol
VDSS
VGSS
ID
IDL
IDP
Power Dissipation
Junction Temperature
Tc=25C
PD
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *¹
Lead Temperature for Soldering
Purposes, 3 mm from case for 10 seconds
IS
EAS
TL
Value
Unit
1500
V
±30
V
9
A
6
A
18
A
3.0
W
78
150
C
55 to
C
+150
6
A
197
mJ
260
C
Electrical Connection
N-Channel
Marking
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *²
Note : *¹ VDD=50V, L=10mH, IAV=6A (Fig.1)
*² Insertion mounted
Symbol
R_JC
R_JA
Value
1.60
41.7
Unit
C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
February 2015 - Rev. 1
Publication Order Number :
NDUL09N150C/D