NDTL03N150C_16 Datasheet, PDF (1/5 Pages) ON Semiconductor – Power MOSFET

NDTL03N150C
Power MOSFET
1500V, 10.5Ω, 2.5A, N-Channel
Features
• Low On-Resistance
• Ultra High Voltage
• High Speed Switching
• 100% Avalanche Tested
• Pb-Free and RoHS compliance
Typical Applications
• Switch mode power supply
• AC Drive
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1, 2, 3, 4)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
1500
V
±30
V
Drain Current (DC)
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
ID
2.5
A
IDP
5
A
Power Dissipation
Tc=25°C
PD
2.5
140
W
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg
−55 to +150 °C
Avalanche Energy (Single Pulse) (Note 2) EAS
34 mJ
Avalanche Current (Note 3)
IAV
2.5
A
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
Note 2 : VDD=50V, L=10mH, IAV=2.5A (Fig.1)
Note 3 : L≤10mH, Single Pulse
THERMAL RESISTANCE RATINGS
Parameter
Junction to Case Steady State
Junction to Ambient (Note 4)
Note 4 : Insertion mounted
Symbol
R_θJC
R_θJA
Value
0.89
50.0
Unit
°C/W
www.onsemi.com
VDSS
1500V
RDS(on) Max
10.5Ω@10V
ID _Max
2.5A
ELECTRICAL CONNECTION
N-Channel
2
1 : Gate
1
2 : Drain
3 : Source
3
MARKING
03N150
C ^{LOT No.}
1
2
3
TO-3P-3L
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
March 2016 - Rev. 2
Publication Order Number :
NDTL03N150C/D