NDPL180N10B Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel Power MOSFET

NDPL180N10B
Power MOSFET
100V, 3.0mΩ, 180A, N-Channel
www.onsemi.com
Features
• Ultra Low On-Resistance
• Low Gate Charge
• High Speed Switching
• 100% Avalanche Test
• Pb-Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Power Dissipation
Tc=25°C
Junction Temperature
Storage Temperature
VDSS
VGSS
ID
IDL
IDP
PD
Tj
Tstg
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *¹
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
IS
EAS
TL
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *²
Symbol
R_θJC
R_θJA
Note: *1 VDD=48V, L=100μH, IAV=70A (Fig.1)
*2 Insertion mounted
Value
Unit
100
V
±20
V
180
A
100
A
600
A
2.1
200
W
175
°C
−55 to +175
°C
100
A
451
mJ
260
°C
Value
0.75
71.4
Unit
°C/W
VDSS
100V
RDS(on) Max
3.0mΩ@ 15V
3.5mΩ@ 10V
ID _Max
180A
Electrical Connection
N-Channel
2
1 : Gate
1
2 : Drain
3 : Source
3
Marking
180N10
B ^{LOT No.}
123
TO-220-3L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 3
Publication Order Number :
NDPL180N10B/D