NDPL070N10B Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

NDPL070N10B
Power MOSFET
100V, 10.8mΩ, 70A, N-Channel
This N-Channel Power MOSFET is produced using ON Semiconductor’s
trench technology, which is specifically designed to minimize gate charge
and ultra low on resistance. This device is suitable for applications with
low gate charge driving or ultra low on resistance requirements.
Features
 Low On-Resistance
 Low Gate Charge
 High Speed Switching
 100% Avalanche Tested
 Pb-Free and RoHS compliance
Applications
 Battery Protection
 Motor Drive
 Primary Side Switch
 Secondary Side Synchronous Rectification
SPECIFICATION
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW10s, duty cycle1%
Power Dissipation
Tc=25C
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
100
V
±20
V
70
A
280
A
2.1
72
W
175 C
Storage Temperature
Tstg
55 to +175 C
Source Current (Body Diode)
IS
70
A
Avalanche Energy (Single Pulse) (Note 2) EAS
82 mJ
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
TL
260 C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should
not be assumed, damage may occur and reliability may be affected.
2 : VDD=48V, L=100H, IAV=30A (Fig.1)
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient (Note 3)
Note 3 : Insertion mounted
Symbol
R_JC
R_JA
Value
2.08
71.4
Unit
C/W
www.onsemi.com
VDSS
100V
RDS(on) Max
10.8 mΩ@15V
12.8 mΩ@10V
ID _Max
70A
ELECTRICAL CONNECTION
N-Channel
D(2)
G(1)
S(3)
MARKING
TO-220-3L
070N10
B ^LOTNo.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
September 2015 - Rev. 0
Publication Order Number :
NDPL070N10B/D