NDP04N50Z Datasheet, PDF (1/9 Pages) ON Semiconductor – N-Channel Power MOSFET 500 V, 2.7 

NDP04N50Z, NDD04N50Z
N-Channel Power MOSFET
500 V, 2.7 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
Continuous Drain Current
R_qJC, T_A = 100°C
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I_D = 3.4 A
ESD (HBM) (JESD22−A114)
Peak Diode Recovery
V_DSS
I_D
I_D
I_DM
P_D
V_GS
E_AS
V_esd
dv/dt
500
V
3.4
3.0
A
2.1
1.9
A
14
12
A
75
61
W
±30
V
120
mJ
2800
4.5 (Note 1)
V
V/ns
Continuous Source Current
(Body Diode)
I_S
3.4
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I_D v 3.4 A, di/dt ≤ 200 A/ms, V_DD ≤ BV_DSS, T_J ≤ 150°C.
http://onsemi.com
V_DSS
500 V
R_DS(on) (MAX) @ 1.5 A
2.7 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
TO−220AB
CASE 221A
STYLE 5
4
4
1
2
3
IPAK
CASE 369D
STYLE 2
12
3
DPAK
CASE 369AA
STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 − Rev. 0
Publication Order Number:
NDD04N50Z/D