NDFPD1N150C Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2236
NDFPD1N150C
N-Channel Power MOSFET
1500V, 0.1A, 150Ω, TO-220F-3FS
http://onsemi.com
Features
• On-resistance RDS(on)=100Ω(typ.)
• Input Capacitance Ciss=80pF(typ.)
• 10V drive
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VGSS
ID
IDP
PW≤10μs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature
Storage Temperature
PD
Tc=25°C
Tch
Tstg
TO-220F-3FS
Ratings
Unit
1500
V
±30
V
0.1
A
0.2
A
2.0
W
20
W
150
°C
- 55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=50mA
ID=50mA, VGS=10V
VDS=30V, f=1MHz
See Fig.1
VDS=200V, VGS=10V, ID=0.1A
IS=0.1A, VGS=0V
min
1500
Ratings
typ
2
0.1
100
80
9
2.5
8
13
43
280
4.2
0.7
2
0.8
Unit
max
V
1 mA
±100 nA
4V
S
150 Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.5
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N1313 TKIM TC-00003052 No. A2236-1/5