NDFP03N150C Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2232
NDFP03N150C
N-Channel Power MOSFET
1500V, 2.5A, 10.5Ω, TO-220F-3FS
http://onsemi.com
Features
• On-resistance RDS(on)=8Ω(typ.)
• Input Capacitance Ciss=650pF(typ.)
• 10V drive
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
VDSS
Gate to Source Voltage
Drain Current (DC)
Drain Current (DC) Limited by Package
Drain Current (Pulse)
VGSS
ID
IDL
IDP
PW≤10μs, duty cycle≤1%
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *¹
Avalanche Current *²
*¹ VDD=50V, L=10mH, IAV=2A (Fig.1)
*² L≤10mH, Single Pulse
PD
Tch
Tstg
EAS
IAV
Tc=25°C
TO-220F-3FS
Ratings
Unit
1500
V
±30
V
2.5
A
2
A
5
A
2
W
32
W
150
°C
- 55 to +150
°C
20
mJ
2
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta = 25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=1A
ID=1A, VGS=10V
VDS=30V, f=1MHz
See Fig.2
min
1500
Ratings
typ
2
1.9
8
650
70
20
15
20
148
44
Unit
max
V
1 mA
±100 nA
4V
S
10.5 Ω
pF
pF
pF
ns
ns
ns
ns
Continued on next Page.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N1313 TKIM TC-00003050 No. A2232-1/5