NDF60N550U1 Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

NDF60N550U1,
NDD60N550U1
Product Preview
N-Channel Power MOSFET
600 V, 550 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_J = 25°C unless otherwise
noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous
Drain
Current
R_qJC
(Note 1)
Steady
State
T_C =
25°C
T_C =
100°C
Power
Dissipation –
R_qJC
Pulsed Drain
Current
Steady
State
T_C =
25°C
t_p = 10 ms
V_DSS
V_GS
I_D
P_D
I_DM
600
V
±25
V
9.5
8.5
A
6
5.4
28
96
W
38
34
A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source
Avalanche Energy
T_J,
T_STG
I_S
EAS
−55 to +150
°C
9.5
8.5
A
TBD
mJ
Lead Temperature for Soldering
T_L
Leads
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain)
NDF60N550U1 R_qJC
NDD60N550U1
Junction−to−Ambient Steady State
NDF60N550U1
NDD60N550U1
NDD60N550U1−1
R_qJA
Value
4.4
1.3
50
33
96
Unit
°C/W
°C/W
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
V_(BR)DSS
600 V
R_DS(ON) MAX
550 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
4
1 ₂₃
TO−220FP
CASE 221AH
1 ₂₃
IPAK
CASE 369D
4
12
3
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
October, 2012 − Rev. P1
Publication Order Number:
NDF60N550U1/D