NDF11N50Z_15 Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET

NDF11N50Z
N-Channel Power MOSFET
500 V, 0.52 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
NDF
Unit
Drain−to−Source Voltage
Continuous Drain Current, R_qJC (Note 1)
Continuous Drain Current
T_A = 100°C, R_qJC (Note 1)
Pulsed Drain Current,
t_P = 10 ms
Power Dissipation, R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, I_D = 10 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
V_DSS
I_D
I_D
I_DM
P_D
V_GS
E_AS
V_esd
V_ISO
dv/dt
500
V
12
A
7.4
A
44
A
39
W
±30
V
420
mJ
4000
V
4500
V
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current (Body
I_S
12
A
Diode)
Maximum Temperature for
Soldering Leads
T_L
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I_d ≤ 10.5 A, di/dt ≤ 200 A/ms, V_DD ≤ BV_DSS, T_J ≤ 150°C.
www.onsemi.com
V_DSS
500 V
R_DS(ON) (MAX) @ 4.5 A
0.52 W
N−Channel
D (2)
G (1)
S (3)
MARKING
DIAGRAM
NDF11N50ZG
NDF11N50ZH
TO−220FP
CASE 221AH
NDF11N50ZG
or
NDF11N50ZH
AYWW
Gate
Source
A
Y
WW
G, H
Drain
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
February, 2015 − Rev. 6
Publication Order Number:
NDF11N50Z/D