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NDF11N50Z Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET 500 V, 0.52 | |||
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NDF11N50Z, NDP11N50Z
N-Channel Power MOSFET
500 V, 0.52 W
Features
⢠Low ON Resistance
⢠Low Gate Charge
⢠100% Avalanche Tested
⢠These Devices are PbâFree and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF11N50Z NDP11N50Z Unit
DrainâtoâSource Voltage
VDSS
500
V
Continuous Drain Current,
ID
10.5 (Note
10.5
A
RqJC
2)
Continuous Drain Current
ID
6.7 (Note 2)
6.7
A
TA = 100°C, RqJC
Pulsed Drain Current,
VGS @ 10 V
IDM
42 (Note 2)
42
A
Power Dissipation, RqJC
PD
36
(Note 1)
145
W
GateâtoâSource Voltage
VGS
Single Pulse Avalanche
EAS
Energy, ID = 10.5 A
ESD (HBM)
Vesd
(JESD22âA114)
±30
V
190
mJ
4000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ⤠30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VISO
dv/dt
4500
4.5 (Note 3)
V
V/ns
Continuous Source Cur-
IS
rent (Body Diode)
10.5
A
Maximum Temperature for
TL
Soldering Leads
260
°C
Operating Junction and
TJ, Tstg
â55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1â³ sq. pad size, (Cu area = 1.127 in sq
[2 oz] including traces).
2. Limited by maximum junction temperature
3. Id ⤠10.5 A, di/dt ⤠200 A/ms, VDD ⤠BVDSS, TJ ⤠150°C.
http://onsemi.com
VDSS
500 V
RDS(ON) (MAX) @ 4.5 A
0.52 Ω
NâChannel
D (2)
G (1)
TOâ220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TOâ220
CASE 221A
STYLE 5
NDF11N50ZG
or
NDP11N50ZG
AYWW
Gate
Source
Drain
A
= Location Code
Y
= Year
WW
= Work Week
G
= PbâFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
July, 2010 â Rev. 0
Publication Order Number:
NDF11N50Z/D
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