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NDF10N62Z Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET 620 V, 0.65 Ω | |||
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NDF10N62Z, NDP10N62Z
N-Channel Power MOSFET
620 V, 0.65 W
Features
⢠Low ON Resistance
⢠Low Gate Charge
⢠Zener Diodeâprotected Gate
⢠100% Avalanche Tested
⢠These Devices are PbâFree and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol NDF10N62Z NDP10N62Z Unit
DrainâtoâSource Voltage
Continuous Drain Current,
RqJC
Continuous Drain Current
RqJC, TA = 100°C
Pulsed Drain Current,
VGS @ 10 V
Power Dissipation, RqJC
(Note 1)
VDSS
ID
ID
IDM
PD
620 (Note 1)
V
10 (Note 2)
A
5.7 (Note 2)
A
36 (Note 2)
A
36
125
W
GateâtoâSource Voltage
VGS
Single Pulse Avalanche
EAS
Energy, ID = 10 A
ESD (HBM)
Vesd
(JESD22âA114)
±30
V
300
mJ
3900
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ⤠30%,
TA = 25°C) (Figure 14)
Peak Diode Recovery
VISO
dv/dt
4500
4.5 (Note 3)
V
V/ns
Continuous Source
IS
Current (Body Diode)
10
A
Maximum Temperature for
TL
Soldering Leads
260
°C
Operating Junction and
TJ, Tstg
â55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1â³ sq. pad size,
(Cu area = 1.127 in sq [2 oz] including traces)
2. Limited by maximum junction temperature
3. IS ⤠10 A, di/dt ⤠200 A/ms, VDD = 80% BVDSS
http://onsemi.com
VDSS
620 V
RDS(ON) (TYP) @ 5 A
0.65 Ω
NâChannel
D (2)
G (1)
TOâ220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TOâ220AB
CASE 221A
STYLE 5
NDF10N62ZG
or
NDP10N62ZG
AYWW
Gate
Source
Drain
A
= Location Code
Y
= Year
WW
= Work Week
G
= PbâFree Package
ORDERING INFORMATION
Device
NDF10N62ZG
NDP10N62ZG
Package
TOâ220FP
TOâ220AB
Shipping
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 â Rev. 0
Publication Order Number:
NDF10N62Z/D
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