NDF10N60Z_15 Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET

NDF10N60Z
N-Channel Power MOSFET
600 V, 0.75 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• 100% R_g Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
NDF
Unit
Drain−to−Source Voltage
Continuous Drain Current, R_qJC (Note 1)
Continuous Drain Current
T_A = 100°C, R_qJC (Note 1)
Pulsed Drain Current,
t_P = 10 ms
Power Dissipation, R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy
(L = 6.0 mH, I_D = 10 A)
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 13)
Peak Diode Recovery (Note 2)
V_DSS
I_D
I_D
I_DM
P_D
V_GS
E_AS
V_esd
V_ISO
dV/dt
600
V
10
A
6.0
A
40
A
39
W
±30
V
300
mJ
3900
V
4500
V
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current (Body Diode)
I_S
Maximum Temperature for
T_L
Soldering Leads
10
A
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg − 55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature.
2. I_S ≤ 10 A, di/dt ≤ 200 A/ms, V_DD = 80% BV_DSS
www.onsemi.com
V_DSS (@ T_Jmax)
650 V
R_DS(ON) (MAX) @ 5 A
0.75 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF10N60ZG
NDF10N60ZH
TO−220FP
CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 13
Publication Order Number:
NDF10N60Z/D