NDF10N60ZH Datasheet, PDF (1/8 Pages) ON Semiconductor – N-Channel Power MOSFET 600 V, 0.75 Ohm

NDF10N60Z
N-Channel Power MOSFET
600 V, 0.75 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• 100% R_g Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
NDF
Unit
Drain−to−Source Voltage
Continuous Drain Current, R_qJC (Note 1)
Continuous Drain Current
T_A = 100°C, R_qJC (Note 1)
Pulsed Drain Current,
t_P = 10 ms
Power Dissipation, R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy
(L = 6.0 mH, I_D = 10 A)
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 13)
Peak Diode Recovery (Note 2)
V_DSS
I_D
I_D
I_DM
P_D
V_GS
E_AS
V_esd
V_ISO
dv/dt
600
V
10
A
6.0
A
40
A
39
W
±30
V
300
mJ
3900
V
4500
V
4.5
V/ns
Continuous Source Current (Body Diode)
I_S
Maximum Temperature for
T_L
Soldering Leads
10
A
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg − 55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature.
2. I_S ≤ 10 A, di/dt ≤ 200 A/ms, V_DD = 80% BV_DSS
http://onsemi.com
V_DSS (@ T_Jmax)
650 V
R_DS(ON) (MAX) @ 5 A
0.75 Ω
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF10N60ZG
TO−220FP
CASE 221D
1
2
3
NDF10N60ZH
TO−220FP
CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
February, 2012 − Rev. 10
Publication Order Number:
NDF10N60Z/D