NDF10N60Z Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET 0.65 Ω, 600 Volts

NDF10N60Z, NDP10N60Z
N-Channel Power MOSFET
0.65 W, 600 Volts
Features
• Low ON Resistance
• Low Gate Charge
• Zener Diode−protected Gate
• 100% Avalanche Tested
• ROHS Compliant
• This is a Pb−Free Device
Applications
• Adapter (Notebook, Printer, Gaming)
• LCD Panel Power
• ATX Power Supplies
• Lighting Ballasts
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF10N60Z NDP10N60Z Unit
Drain−to−Source Voltage
V_DSS
600 (Note 1)
V
Continuous Drain Current
I_D
Continuous Drain Current
I_D
T_A = 100°C
10 (Note 2)
A
5.7 (Note 2)
A
Pulsed Drain Current,
I_DM
V_GS @ 10 V
36 (Note 2)
A
Power Dissipation (Note 1)
P_D
Gate−to−Source Voltage
V_GS
36
125
W
±30
V
Single Pulse Avalanche
E_AS
Energy, L = 6.0 mH,
I_D = 10 A
300
mJ
ESD (HBM)
V_esd
(JESD 22−114−B)
3900
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 13)
Peak Diode Recovery
Continuous Source
Current (Body Diode)
V_ISO
dv/dt
I_S
4500
4.5 (Note 3)
10
V
V/ns
A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for
10 s Package Body for 10 s
T_L
T_PKG
300
°C
260
Operating Junction and
T_J, T_stg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu
2. Limited by maximum junction temperature
3. I_S ≤ 10 A, di/dt ≤ 200 A/ms, V_DD = 80% BV_DSS
http://onsemi.com
V_DSS
600 V
R_DS(ON) (TYP) @ 5 A
0.65 Ω
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 5
NDF10N60ZG
or
NDP10N60ZG
AYWW
Gate
Source
Drain
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NDF10N60ZG
NDP10N60ZG
Package
TO−220FP
TO−220AB
Shipping
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2009
1
May, 2009 − Rev. 1
Publication Order Number:
NDF10N60Z/D