NDF08N50ZH Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET 500 V, 0.85

NDF08N50Z
N-Channel Power MOSFET
500 V, 0.85 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF08N50Z Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC (Note 1)
Continuous Drain Current R_qJC
T_A = 100°C (Note 1)
Pulsed Drain Current,
V_GS @ 10 V
Power Dissipation
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I_D =
7.5 A
V_DSS
I_D
I_D
I_DM
P_D
V_GS
E_AS
500
V
8.5
A
5.4
A
34
A
35
W
±30
V
190
mJ
ESD (HBM)
(JESD 22−A114)
V_esd
3500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 14)
Peak Diode Recovery (Note 2)
V_ISO
4500
V
dV/dt
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current (Body
Diode)
I_S
7.5
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I_SD = 7.5 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
www.onsemi.com
V_DSS
500 V
R_DS(ON) (MAX) @ 3.6 A
0.85 W
N−Channel
D (2)
G (1)
S (3)
MARKING
DIAGRAM
NDF08N50ZG,
NDF08N50ZH
TO−220FP
CASE 221AH
NDF08N50ZG
or
NDF08N50ZH
AYWW
Gate
Source
A
Y
WW
G, H
Drain
= Location Code
= Year
= Work Week
= Pb−Free, Halogen−Free Package
ORDERING INFORMATION
Device
NDF08N50ZG
Package
TO−220FP
(Pb−Free,
Halogen−Free)
Shipping
50 Units / Rail
NDF08N50ZH TO−220FP
(Pb−Free,
Halogen−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 6
Publication Order Number:
NDF08N50Z/D