NDF08N50Z Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET 500 V, 0.69 

NDF08N50Z, NDP08N50Z
N-Channel Power MOSFET
500 V, 0.69 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF08N50Z NDP08N50Z Unit
Drain−to−Source Voltage
V_DSS
500
V
Continuous Drain Current
I_D
7.5 (Note 1)
7.5
A
R_qJC
Continuous Drain Current
I_D
4.7 (Note 1)
4.7
A
R_qJC T_A = 100°C
Pulsed Drain Current,
V_GS @ 10 V
I_DM
30 (Note 1)
30
A
Power Dissipation
P_D
31
125
W
Gate−to−Source Voltage
V_GS
30
V
Single Pulse Avalanche
E_AS
Energy, I_D = 7.5 A
190
mJ
ESD (HBM)
V_esd
(JESD 22−A114)
3500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 14)
Peak Diode Recovery
V_ISO
dv/dt
4500
4.5
V
V/ns
Continuous Source
I_S
Current (Body Diode)
7.5
A
Maximum Temperature for
T_L
Soldering Leads
260
°C
Operating Junction and
T_J, T_stg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_SD = 7.5 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS
500 V
R_DS(ON) (TYP) @ 3.6 A
0.69 W
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 5
NDF08N50ZG
or
NDP08N50ZG
AYWW
Gate
Source
Drain
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device
NDF08N50ZG
NDP08N50ZG
Package
TO−220FP
TO−220AB
Shipping
50 Units/Rail
In Development
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 1
Publication Order Number:
NDF08N50Z/D