NDF06N62Z Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET 620 V, 0.98 ,

NDF06N62Z, NDP06N62Z
N-Channel Power MOSFET
620 V, 0.98 W,
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF06N62Z NDP06N62Z Unit
Drain−to−Source Voltage
Continuous Drain Current
R_qJC
Continuous Drain Current
R_qJC, T_A = 100°C
Pulsed Drain Current,
V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche
Energy, I_D = 6.0 A
ESD (HBM)
(JESD 22−A114)
V_DSS
I_D
I_D
I_DM
P_D
V_GS
E_AS
V_esd
620
V
6.0 (Note 1)
A
3.8 (Note 1)
A
20 (Note 1)
A
31
113
W
±30
V
113
mJ
3000
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 14)
Peak Diode Recovery
V_ISO
dv/dt
4500
−
4.5 (Note 2)
V
V/ns
Continuous Source
I_S
Current (Body Diode)
6.0
A
Maximum Temperature for
T_L
Soldering Leads
260
°C
Operating Junction and
T_J, T_stg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_SD = 6.0 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS
620 V
R_DS(ON) (TYP) @ 3 A
0.98 Ω
N−Channel
D (2)
G (1)
TO−220FP
CASE 221D
STYLE 1
S (3)
MARKING
DIAGRAM
TO−220AB
CASE 221A
STYLE 5
A
Y
WW
G
NDF06N62ZG
or
NDP06N62ZG
AYWW
Gate
Source
Drain
= Location Code
= Year
= Work Week
= Pb−Free Package
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 0
ORDERING INFORMATION
Device
NDF06N62ZG
NDP06N62ZG
Package
TO−220FP
(Pb−Free)
TO−220AB
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
In Development
1
Publication Order Number:
NDF06N62Z/D