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NDF06N60Z_15 Datasheet, PDF (1/7 Pages) ON Semiconductor – N-Channel Power MOSFET | |||
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NDF06N60Z
N-Channel Power MOSFET
600 V, 1.2 W
Features
⢠Low ON Resistance
⢠Low Gate Charge
⢠ESD DiodeâProtected Gate
⢠100% Avalanche Tested
⢠These Devices are PbâFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainâtoâSource Voltage
Continuous Drain Current, RqJC (Note 1)
Continuous Drain Current
TA = 100°C, RqJC (Note 1)
VDSS
600
V
ID
7.1
A
ID
4.5
A
Pulsed Drain Current,
VGS @ 10 V
IDM
28
A
Power Dissipation, RqJC
PD
GateâtoâSource Voltage
VGS
Single Pulse Avalanche Energy, L = 6.3 mH,
EAS
ID = 6.0 A
35
W
±30
V
113
mJ
ESD (HBM) (JESD22âA114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ⤠30%,
TA = 25°C) (Figure 13)
Peak Diode Recovery (Note 2)
Vesd
3000
V
VISO
4500
V
dv/dt
4.5 V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current (Body Diode)
IS
6.0
A
Maximum Temperature for Soldering Leads
TL
260
°C
Operating Junction and
Storage Temperature Range
TJ, Tstg â 55 to °C
150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. ISD = 6.0 A, di/dt ⤠100 A/ms, VDD ⤠BVDSS, TJ = +150°C
www.onsemi.com
VDSS (@ TJmax)
650 V
RDS(ON) (MAX) @ 3 A
1.2 Ω
NâChannel
D (2)
G (1)
S (3)
1
2
3
NDF06N60ZG,
NDF06N60ZH
TOâ220FP
CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 â Rev. 8
Publication Order Number:
NDF06N60Z/D
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