NDF06N60ZH Datasheet, PDF (1/8 Pages) ON Semiconductor – N-Channel Power MOSFET 600 V, 1.2 

NDF06N60Z
N-Channel Power MOSFET
600 V, 1.2 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Continuous Drain Current, R_qJC (Note 1)
Continuous Drain Current
T_A = 100°C, R_qJC (Note 1)
V_DSS
600
V
I_D
7.1
A
I_D
4.5
A
Pulsed Drain Current,
V_GS @ 10 V
I_DM
28
A
Power Dissipation, R_qJC
P_D
Gate−to−Source Voltage
V_GS
Single Pulse Avalanche Energy, L = 6.3 mH, E_AS
I_D = 6.0 A
35
W
±30
V
113
mJ
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 13)
Peak Diode Recovery (Note 2)
V_esd
3000
V
V_ISO
4500
V
dv/dt
4.5 V/ns
Continuous Source Current (Body Diode)
I_S
6.0
A
Maximum Temperature for Soldering Leads
T_L
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg − 55 to °C
150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_SD = 6.0 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS (@ T_Jmax)
650 V
R_DS(ON) (MAX) @ 3 A
1.2 Ω
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF06N60ZG
TO−220FP
CASE 221D
1
2
3
NDF06N60ZH
TO−220FP
CASE 221AH
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
February, 2013 − Rev. 6
Publication Order Number:
NDF06N60Z/D