NDF05N50Z_15 Datasheet, PDF (1/10 Pages) ON Semiconductor – N-Channel Power MOSFET

NDF05N50Z, NDD05N50Z
N-Channel Power MOSFET
500 V, 1.5 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• 100% Rg Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
V_DSS
500
V
I_D
5.5
4.7 A
(Note 1)
Continuous Drain Current
R_qJC, T_A = 100°C
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I_D =
5.0 A
I_D
3.5
3
A
(Note 1)
I_DM
20
19 A
P_D
30
83 W
V_GS
±30
V
E_AS
130
mJ
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T_A = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
V_esd
V_ISO
dV/dt
3000
4500
4.5
V
V
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current
(Body Diode)
I_S
5
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I_S = 4.4 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
www.onsemi.com
V_DSS
500 V
R_DS(on) (MAX) @ 2.2 A
1.5 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF05N50ZG,
NDF05N50ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD05N50Z−1G
IPAK
CASE 369D
12
3
NDD05N50ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 8
Publication Order Number:
NDF05N50Z/D