NDF05N50ZH Datasheet, PDF (1/12 Pages) ON Semiconductor – N-Channel Power MOSFET 500 V, 1.5 Ohm

NDF05N50Z, NDD05N50Z
N-Channel Power MOSFET
500 V, 1.5 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• 100% Rg Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
V_DSS
500
V
I_D
5.5
4.7 A
(Note 1)
Continuous Drain Current
R_qJC, T_A = 100°C
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I_D =
5.0 A
I_D
3.5
3
A
(Note 1)
I_DM
20
19 A
P_D
30
83 W
V_GS
±30
V
E_AS
130
mJ
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T_A = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
V_esd
V_ISO
dv/dt
3000
4500
4.5
V
V
V/ns
Continuous Source Current
(Body Diode)
I_S
5
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_S = 4.4 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS
500 V
R_DS(on) (MAX) @ 2.2 A
1.5 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF05N50ZG
TO−220FP
CASE 221D
1
2
3
NDF05N50ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD05N50Z−1G
IPAK
CASE 369D
12
3
NDD05N50ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
February, 2013 − Rev. 6
Publication Order Number:
NDF05N50Z/D