NDF05N50Z Datasheet, PDF (1/9 Pages) ON Semiconductor – N-Channel Power MOSFET 500 V, 1.25 Ω

NDF05N50Z, NDP05N50Z,
NDD05N50Z
N-Channel Power MOSFET
500 V, 1.25 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF NDP NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
V_DSS
I_D
500
5
5
(Note 1)
V
4.7 A
Continuous Drain Current
R_qJC, T_A = 100°C
Pulsed Drain Current, V_GS @
10 V
I_D
3.2
3.2 3
A
(Note 1)
I_DM
20
20 19 A
(Note 1)
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I_D = 5.0 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t =
0.3 sec., R.H. ≤ 30%, T_A =
25°C) (Figure 15)
P_D
V_GS
E_AS
V_esd
V_ISO
28
96 83 W
±30
V
130
mJ
3000
V
4500
V
Peak Diode Recovery
dv/dt
4.5 (Note 2)
V/ns
Continuous Source Current
I_S
(Body Diode)
5
A
Maximum Temperature for
Soldering Leads, 0.063″
(1.6 mm) from Case for 10 s
Package Body for 10 s
T_L
T_PKG
300
°C
260
Operating Junction and
T_J, T_stg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_S = 4.4 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS
500 V
R_DS(on) (TYP) @ 2.2 A
1.25 W
N−Channel
D (2)
G (1)
S (3)
4
4
1
2
3
1
2
3
1
2
3
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2009
1
December, 2009 − Rev. 0
Publication Order Number:
NDF05N50Z/D