NDF04N60Z_15 Datasheet, PDF (1/9 Pages) ON Semiconductor – N-Channel Power MOSFET

NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET
600 V, 2.0 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Parameter
Symbol NDF NDD Unit
Drain−to−Source Voltage
V_DSS
600
V
Continuous Drain Current R_qJC (Note 1)
I_D
4.8 4.1 A
Continuous Drain Current R_qJC, T_A =
100°C (Note 1)
I_D
3.0 2.6 A
Pulsed Drain Current,
I_DM
V_GS @ 10V
Power Dissipation R_qJC
P_D
Gate−to−Source Voltage
V_GS
Single Pulse Avalanche Energy, I_D = 4.0 E_AS
A
20
20
A
30
83 W
±30
V
120
mJ
ESD (HBM) (JESD22−A114)
V_esd
3000
V
RMS Isolation Voltage
V_ISO
4500
−
V
(t = 0.3 sec., R.H. ≤ 30%, T_A = 25°C)
(Figure 15)
Peak Diode Recovery (Note 2)
dV/dt
4.5
V/ns
MOSFET dV/dt
dV/dt
60
V/ns
Continuous Source Current
(Body Diode)
I_S
4.0
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I_SD = 4.0 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
www.onsemi.com
V_DSS (@ T_Jmax)
650 V
R_DS(on) (MAX) @ 2 A
2.0 Ω
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF04N60ZG,
NDF04N60ZH
TO−220FP
CASE 221AH
4
4
1
23
NDD04N60Z−1G
IPAK
CASE 369D
12
3
NDD04N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January, 2015 − Rev. 9
Publication Order Number:
NDF04N60Z/D