NDF03N60Z_15 Datasheet, PDF (1/10 Pages) ON Semiconductor – N-Channel Power MOSFET

NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET
600 V, 3.6 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
V_DSS
600
V
I_D
3.1
2.6
A
(Note 1)
Continuous Drain Current R_qJC
T_A = 100°C
I_D
2.9
1.65 A
(Note 1)
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I_D = 3.0 A
ESD (HBM) (JESD 22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T_A = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
I_DM
P_D
V_GS
E_AS
V_esd
V_ISO
dv/dt
12
10
A
27
61
W
±30
V
100
mJ
3000
V
4500
V
4.5
V/ns
Continuous Source Current (Body
I_S
Diode)
3.0
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I_SD = 3.0 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
www.onsemi.com
V_DSS
600 V
R_DS(on) (MAX) @ 1.2 A
3.6 W
N−Channel
D (2)
G (1)
S (3)
1
23
NDF03N60ZG,
NDF03N60ZH
TO−220FP
CASE 221AH
4
4
1
2
3
NDD03N60Z−1G
IPAK
CASE 369D
12
3
NDD03N60ZT4G
DPAK
CASE 369AA
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 8
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
1
Publication Order Number:
NDF03N60Z/D