NDF03N60ZH Datasheet, PDF (1/10 Pages) ON Semiconductor – N-Channel Power MOSFET 600 V, 3.6 

NDF03N60Z, NDD03N60Z
N-Channel Power MOSFET
600 V, 3.6 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
V_DSS
600
V
I_D
3.1
2.6
A
(Note 1)
Continuous Drain Current R_qJC
T_A = 100°C
I_D
2.9
1.65 A
(Note 1)
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I_D = 3.0 A
ESD (HBM) (JESD 22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T_A = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
I_DM
P_D
V_GS
E_AS
V_esd
V_ISO
dv/dt
12
10
A
27
61
W
±30
V
100
mJ
3000
V
4500
V
4.5
V/ns
Continuous Source Current (Body
I_S
Diode)
3.0
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_SD = 3.0 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS
600 V
R_DS(on) (MAX) @ 1.2 A
3.6 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF03N60ZG
TO−220FP
CASE 221D
4
1
2
3
NDD03N60Z−1G
IPAK
CASE 369D
1
2
3
NDF03N60ZH
TO−220FP
CASE 221AH
4
12
3
NDD03N60ZT4G
DPAK
CASE 369AA
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 7
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
1
Publication Order Number:
NDF03N60Z/D