NDF02N60Z_14 Datasheet, PDF (1/10 Pages) ON Semiconductor – N-Channel Power MOSFET

NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8 W
Features
• Low ON Resistance
• Low Gate Charge
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF NDD Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
(Note 1)
V_DSS
I_D
600
V
2.4
2.2
A
Continuous Drain Current R_qJC
T_A = 100°C (Note 1)
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy,
I_D = 2.4 A
ESD (HBM)
(JESD 22−A114)
I_D
I_DM
P_D
V_GS
E_AS
V_esd
1.6
1.4
A
10
9
A
24
57
W
±30
V
120
mJ
2500
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 17)
Peak Diode Recovery (Note 2)
V_ISO
4500
dv/dt
4.5
V
V/ns
Continuous Source Current (Body
I_S
Diode)
2.4
A
Maximum Temperature for Soldering
T_L
Leads
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg
−55 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
2. I_SD = 2.4 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
www.onsemi.com
V_DSS
600 V
R_DS(on) (MAX) @ 1 A
4.8 W
N−Channel
D (2)
G (1)
S (3)
1
2
3
NDF02N60ZG,
NDF02N60ZH
TO−220FP
CASE 221AH
4
1
2
3
NDD02N60Z−1G
IPAK
CASE 369D
4
12
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
January, 2014 − Rev. 8
Publication Order Number:
NDF02N60Z/D