NDF02N60Z Datasheet, PDF (1/10 Pages) ON Semiconductor – N-Channel Power MOSFET 600 V, 4.0 

NDF02N60Z, NDP02N60Z,
NDD02N60Z
N-Channel Power MOSFET
600 V, 4.0 W
Features
• Low ON Resistance
• Low Gate Charge
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol NDF
NDP NDD Unit
Drain−to−Source Voltage
V_DSS
600
V
Continuous Drain Current
R_qJC
I_D
2.4
2.4
2.2
A
(Note 1)
Continuous Drain Current
R_qJC T_A = 100°C
I_D
1.6
1.6
1.4
A
(Note 1)
Pulsed Drain Current, V_GS
I_DM
10
10
@ 10 V
(Note 1)
9
A
Power Dissipation R_qJC
P_D
Gate−to−Source Voltage
V_GS
Single Pulse Avalanche
E_AS
Energy, I_D = 2.4 A
ESD (HBM)
V_esd
(JESD 22−A114)
24
72
30
120
2500
57
W
V
mJ
V
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T_A = 25°C) (Figure 17)
Peak Diode Recovery
V_ISO
dv/dt
4500
4.5 (Note 2)
V
V/ns
Continuous Source Current
I_S
(Body Diode)
2.4
A
Maximum Temperature for
T_L
Soldering Leads
260
°C
Operating Junction and
T_J, T_stg
−55 to 150
°C
Storage Temperature Range
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I_SD = 2.4 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_DSS
600 V
R_DS(on) (TYP) @ 1 A
4.0 W
N−Channel
D (2)
G (1)
S (3)
4
4
1
2
3
1
2
3
1
2
3
12
3
TO−220FP TO−220AB IPAK
DPAK
CASE 221D CASE 221A CASE 369D CASE 369AA
STYLE 1 STYLE 5 STYLE 2 STYLE 2
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
April, 2010 − Rev. 2
Publication Order Number:
NDF02N60Z/D