NDDP010N25AZ Datasheet, PDF (1/6 Pages) ON Semiconductor – N-Channel Power MOSFET

NDDP010N25AZ
Power MOSFET
250V, 10A, 420mΩ, N-Channel
www.onsemi.com
Features
 High Speed Switching
 Low Gate Charge
 ESD Diode-Protected Gate
 100% Avalanche Tested
 Pb-Free, Halogen Free and RoHS Compliance
Electrical Connection
2,4
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PW10s, duty cycle1%
VDSS
VGSS
ID
IDP
Power Dissipation
Tc=25C
PD
Junction Temperature
Tj
Storage Temperature
Tstg
Source Current (Body Diode)
Avalanche Energy (Single Pulse) *¹
Lead Temperature for Soldering
Purposes, 3mm from Case for 10 Seconds
IS
EAS
TL
Thermal Resistance Ratings
Parameter
Junction to Case Steady State
Junction to Ambient *²
Note : *¹ VDD=50V, L=1mH, IAV=5A (Fig.1)
*² Insertion mounted
Symbol
R_JC
R_JA
Value
Unit
250
V
30
V
10
A
A
40
1
W
52
150
C
 55 to
C
+150
10
A
15.5
mJ
C
260
Value
2.40
125
Unit
C/W
1. Gate ₁
2. Drain
3. Source
4. Drain
3
Packing Type:TL
Marking
10N25
TL
AZ
LOT No.
4
12
3
DPAK
4
1
2
IPAK
3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Ordering & Package Information
Device
NDDP010N25AZT4H
NDDP010N25AZ-1H
Package
DPAK(TP-FA),
SC-63, TO-252
IPAK(TP),
SC-64, TO-251
Shipping
700pcs. / reel
500pcs. / bag
Memo
Pb-Free
and
Halogen Free
© Semiconductor Components Industries, LLC, 2014
1
November 2014 - Rev. 2
Publication Order Number :
NDDP010N25AZ/D