NDD60N900U1 Datasheet, PDF (1/8 Pages) ON Semiconductor – N-Channel Power MOSFET

NDD60N900U1
N-Channel Power MOSFET
600 V, 900 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
600
V
Gate−to−Source Voltage
V_GS
±25
V
Continuous Drain Steady T_C = 25°C
I_D
Current R_qJC
State
T_C = 100°C
5.7
A
3.6
Power Dissipation Steady T_C = 25°C
P_D
– R_qJC
State
74
W
Pulsed Drain
Current
t_p = 10 ms
I_DM
20
A
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (I_D = 2 A)
Peak Diode Recovery (Note 1)
T_J,
T_STG
I_S
EAS
−55 to °C
+150
5.7
A
33
mJ
dv/dt
15 V/ns
Lead Temperature for Soldering Leads
T_L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I_SD < 5.7 A, di/dt ≤ 400 A/ms, V_peak < V_(BR)DSS
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain) NDD60N900U1
Junction−to−Ambient Steady State
(Note 3)
NDD60N900U1
(Note 2)
NDD60N900U1−1
(Note 2)
NDD60N900U1−35
R_qJC
R_qJA
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
Value
1.7
47
99
95
Unit
°C/W
°C/W
http://onsemi.com
V_(BR)DSS
600 V
R_DS(ON) MAX
900 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
4
1 ₂₃
IPAK
CASE 369D
STYLE 2
S (3)
4
12
3
DPAK
CASE 369C
STYLE 2
4
12 ₃
IPAK
CASE 369AD
STYLE 2
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 0
Publication Order Number:
NDD60N900U1/D