NDD60N360U1 Datasheet, PDF (1/8 Pages) ON Semiconductor – N-Channel Power MOSFET

NDD60N360U1
N-Channel Power MOSFET
600 V, 360 mW
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol NDD Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R_qJC
Steady
State
Power Dissipation – Steady
R_qJC
State
T_C = 25°C
T_C = 100°C
T_C = 25°C
V_DSS
V_GS
I_D
P_D
600
V
±25
V
11
A
6.9
114
W
Pulsed Drain
Current
t_p = 10 ms
I_DM
44
A
Operating Junction and Storage
Temperature
T_J,
T_STG
−55 to °C
+150
Source Current (Body Diode)
I_S
13
A
Single Pulse Drain−to−Source Avalanche
Energy (I_D = 3.5 A)
EAS
64
mJ
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T_A = 25°C) (Figure 15)
V_ISO
−
V
Peak Diode Recovery (Note 1)
dv/dt
15 V/ns
Lead Temperature for Soldering Leads
T_L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. I_SD ≤ 13 A, di/dt ≤ 400 A/ms, V_{DS peak} ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS
THERMAL RESISTANCE
Parameter
Symbol
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
(Note 3)
NDD60N360U1
(Note 2)
NDD60N360U1−1
(Note 2)
NDD60N360U1−35G
R_qJC
R_qJA
2. Insertion mounted
3. Surface mounted on FR4 board using 1″ sq. pad size
(Cu area = 1.127 in sq [2 oz] including traces)
Value
1.1
47
98
95
Unit
°C/W
°C/W
http://onsemi.com
V_(BR)DSS
600 V
R_DS(ON) MAX
360 mW @ 10 V
N−Channel MOSFET
D (2)
G (1)
S (3)
4
1 ₂₃
IPAK
CASE 369D
4
4
12
3
DPAK
CASE 369C
12 ₃
IPAK
CASE 369AD
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
January, 2014 − Rev. 0
Publication Order Number:
NDD60N360U1/D