NDD03N80Z_13 Datasheet, PDF (1/8 Pages) ON Semiconductor – N‐Channel Power MOSFET

NDD03N80Z
N‐Channel Power MOSFET
800 V, 4.5 W
Features
• ESD Diode−Protected Gate
• 100% Avalanche Tested
• 100% Rg Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Continuous Drain Current R_qJC
Continuous Drain Current
R_qJC, T_A = 100°C
Pulsed Drain Current, V_GS @ 10 V
Power Dissipation R_qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy, I_D = 2.5 A
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage (t = 0.3 sec.,
R.H. ≤ 30%, T_A = 25°C)
Peak Diode Recovery (Note 1)
V_DSS
I_D
I_D
I_DM
P_D
V_GS
E_AS
V_esd
V_ISO
dv/dt
800
2.9
1.9
12
96
±30
100
2300
4500
4.5
V
A
A
A
W
V
mJ
V
V
V/ns
Continuous Source Current
(Body Diode)
I_S
3.3
A
Maximum Temperature for Soldering
Leads
T_L
260
°C
Operating Junction and
Storage Temperature Range
T_J, T_stg − 55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. I_S = 3.3 A, di/dt ≤ 100 A/ms, V_DD ≤ BV_DSS, T_J = +150°C
http://onsemi.com
V_(BR)DSS
800 V
R_DS(ON) MAX
4.5 W @ 10 V
N-Channel
D (2)
G (1)
4
1
2
3
NDD03N80Z−1G
IPAK
CASE 369D
S (3)
4
12
3
NDD03N80ZT4G
DPAK
CASE 369AA
MARKING AND ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
October, 2013 − Rev. 2
Publication Order Number:
NDD03N80Z/D